SSM6L35FE 2008-03-21 1 toshiba field-effect transistor silicon n / p channel mos type SSM6L35FE high-speed switching applications analog switch applications ? n-ch: 1.2-v drive p-ch: 1.2-v drive ? n-ch, p-ch, 2-in-1 ? low on-resistance q1 n-ch: r on = 20 ? (max) (@v gs = 1.2 v) : r on = 8 ? (max) (@v gs = 1.5 v) : r on = 4 ? (max) (@v gs = 2.5 v) : r on = 3 ? (max) (@v gs = 4.0 v) q2 p-ch: r on = 44 ? (max) (@v gs = -1.2 v) : r on = 22 ? (max) (@v gs = -1.5 v) : r on = 11 ? (max) (@v gs = -2.5 v) : r on = 8 ? (max) (@v gs = -4.0 v) q1 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain?source voltage v dss 20 v gate?source voltage v gss 10 v dc i d 180 drain current pulse i dp 360 ma q2 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain?source voltage v dss -20 v gate?source voltage v gss 10 v dc i d -100 drain current pulse i dp -200 ma absolute maximum ratings (ta = 25 c) (common to the q1, q2) characteristic symbol rating unit drain power dissipation p d (note 1) 150 mw channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the appl ication of high temperatur e/current/voltage and the significant change in temperature, etc.) may cause this pr oduct to decrease in the reliability significantly even if the operating conditions (i.e. operati ng temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and indi vidual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating mounted on an fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 0.135 mm 2 6) unit: mm 0.20.05 6 1.20.05 1.60.05 1.00.05 1 2 0.50.5 3 1.60.05 5 4 0.120.05 0.550.05 jedec - jeita - toshiba 2-2n1d weight: 3.0 mg (typ.) es6 1.source1 4.source2 2.gate1 5.gate2 3.drain2 6.drain1
SSM6L35FE 2008-03-21 2 q1 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0v ? ? 10 a drain?source breakdown voltage v (br) dss i d = 0.1 ma, v gs = 0v 20 ? ? v drain cutoff current i dss v ds = 20 v, v gs = 0v ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 1 ma 0.4 ? 1.0 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 50 ma (note 2) 115 ? ? ms i d = 50 ma, v gs = 4 v (note 2) ? 1.5 3 i d = 50 ma, v gs = 2.5 v (note 2) ? 2 4 i d = 5 ma, v gs = 1.5 v (note 2) ? 3 8 drain?source on-resistance r ds (on) i d = 5 ma, v gs = 1.2 v (note 2) ? 5 20 input capacitance c iss ? 9.5 ? reverse transfer capacitance c rss ? 4.1 ? output capacitance c oss v ds = 3 v, v gs = 0v, f = 1 mhz ? 9.5 ? pf turn-on time t on ? 115 ? switching time turn-off time t off v dd = 3 v, i d = 50 ma, v gs = 0 to 2.5 v ? 300 ? ns drain?source forward voltage v dsf i d = - 180 ma, v gs = 0v (note 2) ? -0.9 -1.2 v q2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 v ? ? 10 a drain?source breakdown voltage v (br) dss i d = -0.1 ma, v gs = 0 v -20 ? ? v drain cutoff current i dss v ds = -20 v, v gs = 0 v ? ? -1 a gate threshold voltage v th v ds = -3 v, i d = -1 ma -0.4 ? -1.0 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -50 ma (note 2) 77 ? ? ms i d = -50 ma, v gs = -4 v (note 2) ? 4.3 8 i d = -50 ma, v gs = -2.5 v (note 2) ? 5.6 11 i d = -5 ma, v gs = -1.5 v (note 2) ? 8.2 22 drain?source on-resistance r ds (on) i d = -2 ma, v gs = -1.2 v (note 2) ? 11 44 input capacitance c iss ? 12.2 ? reverse transfer capacitance c rss ? 6.5 ? output capacitance c oss v ds = -3 v, v gs = 0 v, f = 1 mhz ? 10.4 ? pf turn-on time t on ? 175 ? switching time turn-off time t off v dd = -3 v, i d = -50 ma, v gs = 0 to -2.5 v ? 251 ? ns drain?source forward voltage v dsf i d = 100 ma, v gs = 0 v (note 2) ? 0.83 1.2 v note 2: pulse test marking equivalent circuit (top view) ll3 6 5 4 1 2 3 654 123 q1 q2
SSM6L35FE 2008-03-21 3 q1 switching time test circuit (a) test circuit (b) v in q2 switching time test circuit (a) test circuit (b) v in q1 usage considerations let v th be the voltage applied between gate and sour ce that causes the drain current (i d ) to below (1 ma for the q1 of the SSM6L35FE). then, for normal switching operation, v gs(on) must be higher than v th, and v gs(off) must be lower than v th. this relationship can be expressed as: v gs(off) < v th < v gs(on). take this into consideration when using the device. q2 usage considerations let v th be the voltage applied between gate and sour ce that causes the drain current (i d ) to below ( ? 1 ma for the q2 of the SSM6L35FE). then, for no rmal switching operation, v gs(on) must be higher than v th, and v gs(off) must be lower than v th. this relationship can be expressed as: v gs(off) < v th < v gs(on). take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing , and containers and other objects that come into direct contact with devices should be made of antistatic materials. v dd = 3 v d.u. 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c v dd out in 2.5 v 0 10 s 50 r l (c) v out t on 90% 10% 0 v 2.5 v 10% 90% t off t r t f v dd v ds ( on ) (c) v out v dd = -3 v d.u. 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c in 0 ? 2.5v 10 s v dd out 50 r l t on 90% 10% ?2.5 v 0 v 90% 10% t off t r t f v ds (on) v dd
SSM6L35FE 2008-03-21 4 q1 (n-ch mosfet) i d ? v gs gate?source voltage v gs (v) drain current i d (ma) 02 3 1 0.01 1 1000 0.1 10 100 ta = 100c common source v ds = 3 v ? 25c 25c i d ? v ds drain?source voltage v ds (v) drain current i d (ma) 0 0 200 12 1.5 0.5 100 300 400 v gs = 1.2 v 1.5 v 1.8 v common source ta = 25c 4 v 10 v 2.5 v r ds (on) ? i d drain current i d (ma) drain?source on-resistance r ds (on) ( ? ) v gs = 1.2 v 0 1 10 1000 10 5 100 1.5 v common source ta = 25c 2.5 v 4 v r ds (on) ? v gs gate?source voltage v gs (v) drain?source on-resistance r ds (on) ( ? ) 04 1 0 8 26 0 10 5 common source i d = 50 ma 25c ta = 100c ? 25c r ds (on) ? ta ambient temperature ta (c) drain?source on-resistance r ds (on) ( ? ) 0 10 5 ? 50 50 150 0 100 common source 2.5 v, 50 ma 4 v, 50 ma 1.5 v, 5 ma v gs = 1.2 v, i d = 5 ma r ds (on) ? v gs gate?source voltage v gs (v) drain?source on-resistance r ds (on) ( ? ) 0 4 10 8 2 6 0 5 10 common source i d = 5 ma ta = 100c 25c ? 25c
SSM6L35FE 2008-03-21 5 q1 (n-ch mosfet) v th ? ta ambient temperature ta (c) gate threshold voltage v th (v) ? 50 50 150 0 100 0 1.0 0.5 common source i d = 1 ma v ds = 3 v ? y fs ? ? i d drain current i d (ma) forward transfer admittance ? y fs ? (ms) 1 10 100 1000 1 3 5 10 30 50 100 300 500 common source v ds = 3 v ta = 25c 1000 i dr ? v ds drain?source voltage v ds (v) drain reverse current i dr (ma) 0.01 1 1000 0.1 10 100 0 ? 1.5 ? 0.5 ? 1 common source v gs = 0 v g d s i dr 25c ta = 100c ? 25c c ? v ds drain?source voltage v ds (v) capacitance c (pf) c iss c oss c rss common source v gs = 0 v f = 1 mhz ta = 25c 10 100 1 5 50 1 10 100 5 50 0.5 0.1 t ? i d drain current i d (ma) switching time t (ns) 0.1 1 10 100 10 30 50 100 300 500 1000 3000 5000 1000 t off t f t on t r common source v dd = 3 v v gs = 0 to 2.5 v ta = 25c
SSM6L35FE 2008-03-21 6 q2 (p-ch mosfet) i d ? v gs gate?source voltage v gs (v) drain current i d (ma) -0.01 0 -1 -1000 -2 -1 -0.1 -10 -100 ? 25c ta = 100c 25c common source v ds = -3v -3 i d ? v ds drain?source voltage v ds (v) drain current i d (ma) 0 -0.5 -1 -1.5 -2 common source ta = 25c 0 -50 -100 -150 -200 -250 -10v -2.5v -1.8v -1.5v v gs =-1.2v -4v r ds (on) ? v gs gate?source voltage v gs (v) drain?source on-resistance r ds (on) ( ? ) -10 -8 -6 -4 -2 0 0 20 10 5 15 common source i d = -5 ma ta=100 25 -25 r ds (on) ? v gs gate?source voltage v gs (v) -10 -8 -6 -4 -2 0 0 25 ta=100 -25 5 10 15 common source i d = -50 ma drain?source on-resistance r ds (on) ( ? ) drain current i d (ma) drain?source on-resistance r ds (on) ( ? ) 0 -1 10 -1000 -10 5 15 20 -100 r ds (on) ? i d v gs = -1.2 v -4 v -2.5 v -1.5 v common source ta = 25c 0 ? 50 10 50 150 0 5 20 15 100 r ds (on) ? ta ambient temperature ta (c) drain?source on-resistance r ds (on) ( ? ) -2.5 v, -50ma v gs =? 1.2 v, id=-2ma -4v, -50ma -1.5 v, -5ma common source
SSM6L35FE 2008-03-21 7 q2 (p-ch mosfet) v th ? ta ambient temperature ta (c) gate threshold voltage v th (v) 0 -0.4 -0.2 -1 -0.8 -0.6 common source i d = -1 ma v ds = -3 v ? 50 50 150 0 100 drain?source voltage v ds (v) -0.1 10 100 -100 -1 -10 c ? v ds 1 capacitance c (pf) c iss c rss c oss common source v gs = 0 v f = 1 mhz ta = 25c i dr ? v ds drain?source voltage v ds (v) drain reverse current i dr (ma) 0.01 0 1 1000 1.4 0.4 0.1 10 100 0.2 0.6 0.8 1 1.2 common source v gs = 0 v g d s i dr ta=100 25c -25c drain current i d (ma) switching time t (ns) 10 -0.1 100 10000 1000 -100 -1 -10 t ? i d -1000 t r t on t f t off common source v dd = -3 v v gs = 0 to -2.5 v ta = 25c ? y fs ? ? i d drain current i d (ma) forward transfer admittance ? y fs ? (ms) 1 -1 10 1000 100 -1000 -10 -100 common source v ds = -3 v ta = 25c 0 0 250 160 40 50 200 20 60 80 100 140 120 p d * ? ta ambient temperature ta (c) drain power dissipation p d * (mw) 100 150 mounted on fr4 board. (25.4 mm 25.4 mm 1.6 mm, cu pad: 0.135 mm 2 6) *:total rating
SSM6L35FE 2008-03-21 8 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? 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